Characterization and Modeling of Metal/Double-Insulator/Metal Diodes for Millimeter W

[reza1217]

Abstract — In this paper we present measurements, models, and circuit implementations for a new low cost, thin film, metal/double-insulator/metal (MIIM) based tunneling diode technology. The device technology uses two insulators to form a tunneling device with very high speed performance capability, and is potentially compatible with many substrate technologies. This technology can potentially reduce cost, size, and improve performance for applications associated with high-speed communications, automotive collision avoidance and navigation, and homeland security weapons detection. Measured results of DC, S-parameter, and responsivity measurements in the 60 GHz band will be presented, including unmatched responsivity at 60 GHz of over 1000 V/W at -20dBm, which is competitive with detector diodes on GaAs or Sb-based materials. ADS-compatible non-linear models are developed and demonstrated, and an envelope detector design and results is presented.

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